Please use this identifier to cite or link to this item:
|Title:||Depositi CVD per Accrescere la Resistenza alla Corrosione delle Barriere Termiche|
|Authors:||CRIPPA Angelo; BROSSA Francesco; BIANCHI P.|
|Type:||Articles in periodicals and books|
|Abstract:||Silicon dioxide (SiO2) films were deposited on thermal barrier coatings (TBC) by means of metal-organnic chemical vapour deposition (MOCVD) in an attempt to reduce the external porosity. The thermal barrier coatings were fabricated by plasma spray method and consisted of an outer yttria-stabilized zirconia layer, an intermediate bonding layer of a CoNiCrAlY (AMDRY 995) and a nickel superalloy substrate (UD520). The SiO2 layers were deposited using tetraethylorthosilicate (TEOS) as a precursor and with nitrogen and oxygen as carrier gas and reactant gases respectively. Following the thin film deposition the effectiveness of sealing was evaluated, firstly by porosity measurements at room temperature and secondly by testing the oxidation resistance at 1000 C.|
|JRC Institute:||Joint Research Centre Historical Collection|
Files in This Item:
There are no files associated with this item.
Items in repository are protected by copyright, with all rights reserved, unless otherwise indicated.