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|Title:||Dual Ion Beam Deposition of Carbon Nitride Films at Low Temperatures|
|Authors:||HAMMER Peter; LENARDI Cristina; HAUPT Justus; GISSLER Wolfram|
|Citation:||Surface Coatings and Technology|
|Type:||Articles in periodicals and books|
|Abstract:||Carbon nitride films (CNx) were deposited by dual ion beam sputtering. A graphite target was sputtered with nitrogen ions and the growing film was simultaneously bombarded by a focused N2 ion beam. A series of films were produced, varying the sputter beam voltage between 100 and 1400 V and the applied assisting beam voltage from 80 to 500 V. The substrate was held at temperatures of 80, 130, 230, 310 and 673 K. The coatings were characterized with respect to their electrical, optical and structural properties. The nitrogen content was measured by AES/XPS and a maximum nitrogen concentration of 44 at %was obtained for a sample deposited at 130 K. The chemical structure was investigated by XPS and FTIR spectroscopy. Reduction of the substrate temperature in conjunction with low sputter beam voltages (<200 V) caused the optical band gap to increase up to 2.2 eV, the sheet conductivity to decrease to less than 10-9 (omega cm)-1 and the density to be reduced to 1.6 g/cm3. The increasing transparency is accompanied by structural changes indicating a transition from a predominantly aromatic sp2 bonded amorphous sp2/sp3 C-N network to a more linear polymer-like structure consisting predominantly of C=N and C=N bonds. No evidence for the formation of the beta-C3N4 phase was found.|
|JRC Institute:||Joint Research Centre Historical Collection|
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