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|Title:||Synthesis of Carbon Nitride Films at Low Temperatures|
|Authors:||HAMMER Peter; LENARDI Cristina; GISSLER Wolfram|
|Citation:||Journal of Vacuum Science and Technology A vol. A15 p. 107-112|
|JRC Publication N°:||JRC14343|
|Type:||Articles in Journals|
|Abstract:||Carbon nitride films (CNx) have been deposited by sputtering a graphite target with nitrogen ions. Films were grown both with and without the presence of an assisting focused N2 ion beam. The sputter beam voltagewas varied between 150 and 1500 V and the applied assisting beam voltage from 80 to 500 V. The substrate was held at teperatures of 80, 140, 310 and 673 K. The coatings were characterised with respect to their electrical, optical and structural properties. The nitrogen content was measured by XPS and a maximum nitrogen concentration of 44 at % was obtained for a non-assisted sample deposited at 140 K. The chemical structure was investigated by XPS and FTIR spectroscopy. Reduction of the substrate temperature in conjunction with low sputter beam voltages (<200V) caused the optical band gap to increase ut to 2.2 e V, the sheet conductivity to decrease to less than 10-9 (omega cm)-1 and the density to be reduced to 1.6 g/c3. The increasing transparency is accompanied by structural changes indicating a transition from a predominantly sp2/sp3 C-N network to a more linear polymer-like strcture consisting predominantly of doubly and triply bonded C and N atoms. No evidence for the formation of the Beta=C3N4 phase was found.|
|JRC Institute:||Joint Research Centre Historical Collection|
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