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|Title:||Modelling of the Oxidation Kinetics of a Yttria-Doped Hot-Pressed Silicon Nitride.|
|Authors:||COSTA OLIVEIRA Fernando; BAXTER David; UNGEHEUER Juergen|
|Citation:||Journal of the European Ceramics Society vol. 18 no. 16 p. 2307-23112|
|Type:||Articles in Journals|
|Abstract:||This paper reports on a study of the oxidation kinetics of a hot-pressed 9 wt% Y2O3, Si3N4 over the temperature range 800 to 1200*C. Data obtained clearly show that oxidation kinetics are mostly non-parabolic suggesting that the oxidation mechanism is more complex than simple diffusion. The oxidation kinetics are modelled and the mechanisms discussed.|
|JRC Institute:||Joint Research Centre Historical Collection|
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