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|Title:||Synthesis and Properties of Carbon Nitride Film Deposited Using a Dual Ion Beam Method.|
|Authors:||BAKER M.; LENARDI Cristina; GISSLER Wolfram|
|Citation:||Vuoto vol. 26 no. 1 p. 38-41|
|Type:||Articles in periodicals and books|
|Abstract:||Carbon nitride films were syntherized by dual ion beam deposition. It has been found that the film growth occurs only if the ion-atom arrival ratio I/A is smaller than a critical value indicating chemical sputtering. Experimental evidence was obtained by monitoring the gas evolved during deposition with a quadrupole gas analyzer. The maximum value of nitrogen content measured by AES was about 35 at %. FT-IR spectroscopy was used to investigate the chemical bonding structure. Hardness measurements with values up to 20 GPa were recorded using a depth sensing nanoindenter.|
|JRC Institute:||Joint Research Centre Historical Collection|
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