Title: Synthesis and Properties of Carbon Nitride Film Deposited Using a Dual Ion Beam Method.
Authors: BAKER M.LENARDI CristinaGISSLER Wolfram
Citation: Vuoto vol. 26 no. 1 p. 38-41
Publication Year: 1998
JRC Publication N°: JRC17380
URI: http://publications.jrc.ec.europa.eu/repository/handle/JRC17380
Type: Articles in Journals
Abstract: Carbon nitride films were syntherized by dual ion beam deposition. It has been found that the film growth occurs only if the ion-atom arrival ratio I/A is smaller than a critical value indicating chemical sputtering. Experimental evidence was obtained by monitoring the gas evolved during deposition with a quadrupole gas analyzer. The maximum value of nitrogen content measured by AES was about 35 at %. FT-IR spectroscopy was used to investigate the chemical bonding structure. Hardness measurements with values up to 20 GPa were recorded using a depth sensing nanoindenter.
JRC Institute:Joint Research Centre Historical Collection

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