Title: Etching of Boron Nitride in R.F. Plasmas.
Authors: SCHAFFNIT CatherineTHOMAS LaurentROSSI Francois
Citation: Journal of Vacuum Science and Technology vol. A15 no. 5 p. 2816
Publication Year: 1997
JRC N°: JRC17666
URI: http://publications.jrc.ec.europa.eu/repository/handle/JRC17666
Type: Articles in Journals
Abstract: This work demonstrates that the chemical etching of hexagonal boron nitride is possible in addition to the sputtering due to the ion bombardment in r.f. plasma environments. In order to study the occurrence of possible physical and chemical mechanisms, post-treatments of boron nitride coatings have been performed using respectively pure argon, Ar/H2 and Ar/Cl2 plasma mixtures. This study reveals the effects of ion bombardment, H/H2 atoms, and Cl/Cl2 on h-BN content in the films. It has been found that, in addition to ion bombardment, hydrogen atoms and more efficiently Cl and/or Cl2 can be considered as chemical etchant of sp2 bonded boron nitride.
JRC Institute:Institute for Health and Consumer Protection

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