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|Title:||Electronic Structure and Optical Properties of Americium Monopnictides|
|Authors:||GOSH D.b.; DE S.k.; OPPENEER P.m.; BROOKS Michael|
|Citation:||PHYSICAL REVIEW B-CONDENSED MATTER vol. B 72 no. 115123 p. 1-10|
|Publisher:||ELSEVIER SCI LTD|
|JRC Publication N°:||JRC30024|
|Type:||Articles in Journals|
|Abstract:||The ground-state and optical properties of the americium monopnictides, AmX (X=N, P, As, Sb, and Bi) are investigated theoretically on the basis of first-principles electronic structure calculations, employing the local density approximation (LDA) as well as the LDA+U approach. The LDA predicts pseudogap-like behavior in AmN and narrow gap (39–78 meV) semiconducting behavior in AmP to AmBi at ambient conditions. The LDA+U calculations predict semiconducting behavior with a real gap of 192 meV for AmN and a pseudogap in AmP to AmBi. The computed semiconducting or pseudogap character is in fine agreement with the first photoemission experiments performed on AmN and AmSb films by Gouder et al. [preceding paper, Phys. Rev. B 72, 115122 (2005)]. This property is shown to result from the strong Am spin-orbit interaction, the Coulomb repulsion, and the particular p-d-f hybridizations. The calculated equilibrium lattice constants obtained for the AmX series using the LDA+U technique are in good agreement with available experimental data. Also, the binding energies of the 5fs computed with the LDA+U approach correspond well to 5f binding energies deduced from the photoemission spectra measured by Gouder et al. The high, temperature-independent paramagnetic susceptibilities of the AmX are successfully explained by a Van Vleck mechanism. A pressure-induced valence transition at high pressure is predicted for AmN.|
|JRC Institute:||Institute for Transuranium Elements|
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