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|Title:||Single- and Few-Walled Carbon Nanotubes Grown at Temperatures as Low as 450 °C: Electrical and Field Emission Characterization|
|Authors:||GOHIER A.; DJOUADI M.a.; DUBOSC M.; GRANIER A.; MINEA T.m.; SIRGHI LUCEL; ROSSI FRANCOIS; PAREDEZ P.; ALVAREZ F.|
|Citation:||JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY vol. 7 no. 9 p. 3350-3353|
|Publisher:||AMER SCIENTIFIC PUBLISHERS|
|Type:||Articles in Journals|
|Abstract:||Single-wall (SW-) and few-walled (FW-) carbon nanotubes (CNTs) were synthesized on aluminum/cobalt coated silicon at temperatures as low as 450 °C by plasma enhanced chemical vapor deposition technique (PECVD). The SWCNTs and FWCNTs grow vertically oriented and well separated from each other. The cold field emission studies of as-grown SWCNTs and FWCNTs showed low turn-on field emission threshold voltages, strongly dependent of the nanotubes morphology. Current-voltage curves of individual CNTs, measured by conductive atomic force microscopy (CAFM), showed an electrical resistance of about 90 KO, that is attributed mainly to the resistance of the contact between the CNTs and the conductive CAFM tip (Au and Pt).|
|JRC Institute:||Institute for Health and Consumer Protection|
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