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|Title:||Pressure-induced Americium Valence Fluctuations Revealed by Electrical Resistivity|
|Authors:||KOLOMIETS A. V.; GRIVEAU JEAN-CHRISTOPHE; HEATHMAN STEPHEN; SHICK A. B.; WASTIN FRANCK; FAURE P.; KLOSEK V.; GENESTIER C.; BACLET N.; HAVELA L.|
|Citation:||EUROPHYSICS LETTERS vol. 82 p. 57007|
|Publisher:||EDP SCIENCES S A|
|Type:||Articles in Journals|
|Abstract:||Electrical resistivity of americium-plutonium fcc alloys was studied over a series of high-pressure¿induced structural phase transitions accompanied by a volume collapse. The temperature dependence of resistivity flattens progressively in the high-pressure phases pointing to the presence of random strong scatterers at the Fermi energy. A theoretical analysis shows that this development is not related to the expected simple delocalization of Am 5f states. Instead it points to pressure-induced americium valence fluctuations (5f6-5f7), which provides a new microscopic basis for the understanding of transuranium materials on the verge of localization of the 5f electronic states.|
|JRC Institute:||Institute for Transuranium Elements|
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