Please use this identifier to cite or link to this item:
|Title:||Ion Beam Deposition of Tantalum Pentoxide Thin Film at Room Temperature|
|Authors:||KULISCH Wilhelm; GILLILAND Douglas; CECCONE Giacomo; RAUSCHER Hubert; SIRGHI Lucel; COLPO Pascal; ROSSI Francois|
|Citation:||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A vol. 26 no. 4 p. 991-995|
|Publisher:||A V S AMER INST PHYSICS|
|JRC Publication N°:||JRC49881|
|Type:||Articles in Journals|
|Abstract:||Tantalum pentoxide (Ta2 O5) thin films have been deposited by reactive ion beam sputtering at room temperature. The films have been characterized by scanning electron microscopy, atomic force microscopy, x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), variable angle ellipsometry, and UV-VIS spectroscopy. The main parameter varied was the oxygen partial pressure. Stoichiometry is reached for pO 3× 10-2 Pa; within the limit of XPS (~1%) the films are free of contaminations. They are extremely smooth with a surface roughness of 0.14 nm only. From FTIR, it can be concluded that they are amorphous. For stoichiometric Ta2 O5 films, the refractive index at 532 nm is in the range from 2.05 to 2.2, while the extinction coefficient is below the detection limit of our ellipsometer. UV-VIS spectra show stoichiometric films to possess a high transmission in a wide wavelength range with an absorption edge below 300 nm.|
|JRC Institute:||Institute for Health and Consumer Protection|
Files in This Item:
There are no files associated with this item.
Items in repository are protected by copyright, with all rights reserved, unless otherwise indicated.