Title: Ion Beam Deposition of Tantalum Pentoxide Thin Film at Room Temperature
Authors: KULISCH WilhelmGILLILAND DouglasCECCONE GiacomoRAUSCHER HubertSIRGHI LucelCOLPO PascalROSSI Francois
Citation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A vol. 26 no. 4 p. 991-995
Publisher: A V S AMER INST PHYSICS
Publication Year: 2008
JRC Publication N°: JRC49881
ISSN: 0734-2101
URI: http://publications.jrc.ec.europa.eu/repository/handle/JRC49881
DOI: 10.1116/1.2832407
Type: Articles in Journals
Abstract: Tantalum pentoxide (Ta2 O5) thin films have been deposited by reactive ion beam sputtering at room temperature. The films have been characterized by scanning electron microscopy, atomic force microscopy, x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), variable angle ellipsometry, and UV-VIS spectroscopy. The main parameter varied was the oxygen partial pressure. Stoichiometry is reached for pO 3× 10-2 Pa; within the limit of XPS (~1%) the films are free of contaminations. They are extremely smooth with a surface roughness of 0.14 nm only. From FTIR, it can be concluded that they are amorphous. For stoichiometric Ta2 O5 films, the refractive index at 532 nm is in the range from 2.05 to 2.2, while the extinction coefficient is below the detection limit of our ellipsometer. UV-VIS spectra show stoichiometric films to possess a high transmission in a wide wavelength range with an absorption edge below 300 nm.
JRC Institute:Institute for Health and Consumer Protection

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