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|Title:||Elemental Engineering: Epitaxial Uranium Thin Films|
|Authors:||SPRINGELL R.; LANDER G. H.; WARD R. C. C.; COWLEY R. A.; LING N.; GOETZE W.; AHUJA R.; LUO W.; JOHANSSON B.; DETLEFS B.|
|Citation:||PHYSICAL REVIEW B vol. 78 p. 193403|
|Publisher:||AMER PHYSICAL SOC|
|Type:||Articles in periodicals and books|
|Abstract:||Epitaxial films of the well-known alpha orthorhombic structure and an unusual hcp form of uranium have been grown on Nb and Gd buffers, respectively, by sputtering techniques. In a 5000 Å film of -U a chargedensity wave has been observed, and its properties are different from those found in the bulk. The 500 Å hcp-U film has a c/a ratio of 1.901, which is unusually large for the hcp structure. Theoretical calculations show that this hcp form is metastable and predict that it orders magnetically.|
|JRC Institute:||Institute for Transuranium Elements|
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