Title: Elemental Engineering: Epitaxial Uranium Thin Films
Authors: SPRINGELL R.LANDER G. H.WARD R. C. C.COWLEY R. A.LING N.GOETZE W.AHUJA R.LUO W.JOHANSSON B.DETLEFS B.
Citation: PHYSICAL REVIEW B vol. 78 p. 193403
Publisher: AMER PHYSICAL SOC
Publication Year: 2008
JRC N°: JRC50009
ISSN: 1098-0121
URI: http://prb.aps.org/
http://publications.jrc.ec.europa.eu/repository/handle/JRC50009
DOI: 10.1103/PhysRevB.78.193403
Type: Articles in Journals
Abstract: Epitaxial films of the well-known alpha orthorhombic structure and an unusual hcp form of uranium have been grown on Nb and Gd buffers, respectively, by sputtering techniques. In a 5000 Å film of -U a chargedensity wave has been observed, and its properties are different from those found in the bulk. The 500 Å hcp-U film has a c/a ratio of 1.901, which is unusually large for the hcp structure. Theoretical calculations show that this hcp form is metastable and predict that it orders magnetically.
JRC Institute:Institute for Transuranium Elements

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