Title: The Deposition of Amorphous Silicon Films by the Technique of Magnetron Sputtering
Authors: GISSLER WolframHAUPT JustusHOFFMANN ArminARENZ H.SCHUBERT Rainer
Publisher: European Commission
Publication Year: 1988
JRC N°: JRC5805
Other Identifiers: EUR 11613 EN
URI: http://publications.jrc.ec.europa.eu/repository/handle/JRC5805
Type: EUR - Scientific and Technical Research Reports
Abstract: THIS REPORT DESCRIBES THE DEPOSITION PROCESS OF HYDROGENATED AMORPHOUS SILICON FILMS IN A COMMERCIALLY AVAILABLE ONE-CHAMBER MAGNETRON SUPTTER SYSTEM. THE SPUTTER CONDITIONS WERE INVESTIGATED BY VARIATION OF THE HYDROGEEN AND ARGON PARTIAL PRESSURE, SPUTTER POWER, AND SPUTTER TEMPERATURE. THE FILMS WERE CHARACTERIZED BY THE OPTICAL BAND GAP ENERGY AND THE DARK AND PHOTO CONDUCTIVITY. IN SPITE OF A SCARCE REPRODUCIBILITY FILMS OF NEARLY GLOW DISCHARGE QUALITY COULD BE PRODUCED. A NEW DOPING METHOD BY SPUTTERING FROM A HIGHLY DOPED SINGLE CRYSTAL WAFER, WHICH WAS USED AS SPUTTER TARGET, IS DESCRIBED. PROMISING BUT STILL PRELIMINARY EXPERIMENTAL RESULTS ARE REPORTED.
JRC Institute:Joint Research Centre Historical Collection

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