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|Title:||Ion Beam Mixing in Uranium Nitride Thin Films Studied by Rutherford Backscattering Spectroscopy|
|Authors:||KIM-NGAN N.-T.h; BALOGH A.g.; HAVELA L.; GOUDER Thomas|
|Citation:||NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS vol. 268 no. 11-12 p. 1875-1879|
|Publisher:||ELSEVIER SCIENCE BV|
|Type:||Articles in Journals|
|Abstract:||Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The films were prepared by reactive DC sputtering at the temperatures of -200 C, +25 C and +300 C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at -200 C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U-N-S-O layers at the interface. The sample irradiation by 1 MeV Ar+ ion beam with ion fluence of about 1.2-1.7 x 1016 ions/cm2 caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at -200 C and at +25 C, but almost no change in the film thickness was detected for the film deposited at +300 C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 x 1016 ions/cm2.|
|JRC Institute:||Institute for Transuranium Elements|
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