Title: Ion Beam Mixing in Uranium Nitride Thin Films Studied by Rutherford Backscattering Spectroscopy
Authors: KIM-NGAN N.-T.hBALOGH A.g.HAVELA L.GOUDER Thomas
Citation: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS vol. 268 no. 11-12 p. 1875-1879
Publisher: ELSEVIER SCIENCE BV
Publication Year: 2010
JRC Publication N°: JRC59250
ISSN: 0168-583X
URI: www.elsevier.com/locate/nimb
http://publications.jrc.ec.europa.eu/repository/handle/JRC59250
DOI: 10.1016/j.nimb2010.02.015
Type: Articles in Journals
Abstract: Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The films were prepared by reactive DC sputtering at the temperatures of -200 C, +25 C and +300 C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at -200 C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U-N-S-O layers at the interface. The sample irradiation by 1 MeV Ar+ ion beam with ion fluence of about 1.2-1.7 x 1016 ions/cm2 caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at -200 C and at +25 C, but almost no change in the film thickness was detected for the film deposited at +300 C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 x 1016 ions/cm2.
JRC Institute:Institute for Transuranium Elements

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