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|Title:||Effect of Input Power and Gas Pressure on the Roughening and Selective Etching of SiO2 /Si Surfaces in Reactive Plasmas|
|Authors:||ZHONG X. X.; TAM E.; HUANG X. Z.; COLPO Pascal; ROSSI Francois; OSTRIKOV K.|
|Citation:||PHYSICS OF PLASMAS vol. 17 no. 9 p. 094501- 4 pages|
|Publisher:||AMER INST PHYSICS|
|Type:||Articles in periodicals and books|
|Abstract:||We report on the application low-temperature plasmas for roughening Si surfaces which is becoming increasingly important for a number of applications ranging from Si quantum dots to cell and protein attachment for devices such as ¿laboratory on a chip¿ and sensors. It is a requirement that Si surface roughening is scalable and is a single-step process. It is shown that the removal of naturally forming SiO2 can be used to assist in the roughening of the surface using a low-temperature plasma-based etching approach, similar to the commonly used in semiconductor micromanufacturing. It is demonstrated that the selectivity of SiO2/Si etching can be easily controlled by tuning the plasma power, working gas pressure, and other discharge parameters. The achieved selectivity ranges from 0.4 to 25.2 thus providing an effective means for the control of surface roughness of Si during the oxide layer removal, which is required for many advance applications in bio- and nanotechnology.|
|JRC Institute:||Institute for Health and Consumer Protection|
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