Please use this identifier to cite or link to this item:
|Title:||Comparison of Electrical Modeling for CI(G)s Thin-film Solar Modules Operating Under Various Outdoor Conditions|
|Authors:||WERNER BARBARA; HULD Thomas; KENNY Robert; ZDANOWICZ Tadeusz|
|Citation:||Proceedings of the 26th EU PVSEC p. 3442-3445|
|Type:||Articles in periodicals and books|
|Abstract:||In this paper we present results of electrical modeling of CI(G)S thin-film photovoltaic (PV) modules located in two different geographical locations – Wrocław in Poland and Ispra in Italy. Electrical parameters were obtained from fitting the large amount of data (i.e. I-V curves) acquired during long-term outdoor monitoring of commercially available modules with use of a double diode equivalent electrical model. Based on an approximation process, two model parameters were chosen for further analysis: diffusion IS1 and recombination IS2 related components of dark diode saturation current. Energy band gap Eg values were calculated for both of PV modules. Determined parameters, together with equations describing the processes of diffusion/recombination in p-n junction and coming from previous investigation of material parameters, were used to model new values of IS1 and IS2. These replace values that were previously approximated with the double diode equivalent model. It allows us to predict measured I-V curves and – what is more – to determine electrical parameters for further analysis and simulations. Keywords: Cu(InGa)Se2, Thin Film, Electrical Properties|
|JRC Institute:||Institute for Energy and Transport|
Files in This Item:
There are no files associated with this item.
Items in repository are protected by copyright, with all rights reserved, unless otherwise indicated.