Title: Electrical Modeling of CIGS Thin-Film Solar Cells Working in Natural Conditions
Citation: SOLAR ENERGY MATERIALS AND SOLAR CELLS vol. 95 no. 9 p. 2583-2587
Publication Year: 2011
JRC N°: JRC65389
ISSN: 0927-0248
URI: www.elsevier.com/locate/solmat
DOI: 10.1016/j.solmat.2011.03.014
Type: Articles in periodicals and books
Abstract: In the paper results of electrical modeling of Cu(InxGa1-x)Se2 (CIGS) thin-film photovoltaic (PV) modules are presented. It was investigated if the equivalent double diode model – DEM (Double diode Equivalent Model) is appropriate to model CIGS PV modules. Modeling was based on large amount of data (including current–voltage (I-V) curves) collected during long-term outdoor monitoring of PV systems. The process of applying baseline physical parameters to 2 of 5 DEM parameters: diffusion IS1 and recombination IS2 related components of dark diode saturation current was carried out. Modeled IS1 and IS2 values were used to replace previously approximated DEM parameters and then to predict measured I-V curves in order to determine electrical parameters of the PV modules. The parameters are used to predict energy yield in natural operating conditions. Results of modeling are presented and compared with measured data.
JRC Directorate:Energy, Transport and Climate

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