@article{JRC48564,
	address = {MELVILLE (UNITED STATES)},
	year = {2008},
	author = {Robouch B and Kisiel A and Robouch P and Kutcherenko I and Vodopyanov LK and Ingrosso L and Marcelli A},
	abstract = {We used the strained-tetrahedron model to interpret published extended x-ray absorption fine structure data on the wurtzite structure of epitaxial GaAIN thin films grown on a sapphire substrate. Site occupation preference coefficients were determined and the nearest neighbour and next-nearest neighbour interion distances were estimated. The three observed ion-pair preference coefficients and the related configuration population coefficients strongly deviate from the random distribution, which indicates that the occurrence of tetrahedral with 1AI+3Ga is highly improbable. Moreover, instead of the eight lines expected the GaAIN phonon spectra display only four strong lines. Finally, the analysis suggests that beyond a concentration of 50% of AI, these thin films grow less homogeneously whatever the method of preparation.
		},
	title = {Local Structure Analysis of Ga1-xAIxN Epitaxial Layer},
	type = {},
	url = {},
	volume = {104},
	number = {},
	journal = {JOURNAL OF APPLIED PHYSICS},
	pages = {073508-1 - 073508-4},
	issn = {0021-8979},
	publisher = {AMER INST PHYSICS},
	doi = {}
}