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A Comparison between the Oxidation Behaviour of Silicon Nitride Hot-Pressed with Neodymium Oxide and a HIPped Silicon Nitride.

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We report on the oxidation of a dense hot-pressed Si3N4 with a Nd-N-apatite grain-boundary phase. This material was prepared in-house and the results of an oxidation study in the range 1273 K to 1648 K are discussed. The results were compared to those of monolithic Nd-N-apatite and a HIPped Si3N4 with only a nominal amount of Y- and Al-Based intergranular phase.
1997-09-24
JRC14607
https://publications.jrc.ec.europa.eu/repository/handle/JRC14607,   
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