Title: Modelling of the Oxidation Kinetics of a Yttria-Doped Hot-Pressed Silicon Nitride.
Citation: Journal of the European Ceramics Society vol. 18 no. 16 p. 2307-23112
Publication Year: 1998
JRC N°: JRC15860
URI: http://publications.jrc.ec.europa.eu/repository/handle/JRC15860
Type: Articles in periodicals and books
Abstract: This paper reports on a study of the oxidation kinetics of a hot-pressed 9 wt% Y2O3, Si3N4 over the temperature range 800 to 1200*C. Data obtained clearly show that oxidation kinetics are mostly non-parabolic suggesting that the oxidation mechanism is more complex than simple diffusion. The oxidation kinetics are modelled and the mechanisms discussed.
JRC Directorate:Joint Research Centre Historical Collection

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