Modelling of the Oxidation Kinetics of a Yttria-Doped Hot-Pressed Silicon Nitride.
This paper reports on a study of the oxidation kinetics of a hot-pressed 9 wt% Y2O3, Si3N4 over the temperature range 800 to 1200*C. Data obtained clearly show that oxidation kinetics are mostly non-parabolic suggesting that the oxidation mechanism is more complex than simple diffusion. The oxidation kinetics are modelled and the mechanisms discussed.
COSTA OLIVEIRA Fernando;
BAXTER David;
UNGEHEUER Juergen;
1998-11-05
JRC15860
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