Deuteron Irradiation Creep of Chemically Vapour Deposited Silicon Carbide Fibers.

Irradiation creep tests were conducted on Textron SCS-6 silicon carbide (SiC) fibers during an irradiation with 14 MeV deuterons for 450 and 600 C. The fiber is produced by a CVD procedure, its microstructure may therefore be representative for the matrix of a SiC composite. There is a significant radiation induced increase in creep deformation. Both quantities, irradiation creep strain and creep rate, are higher at 450 C than at 600 C for doses < 0.07 dpa.

SCHOLZ Reinhard; 

1998-06-22

JRC16619

https://publications.jrc.ec.europa.eu/repository/handle/JRC16619,