Etching of Boron Nitride in R.F. Plasmas.
This work demonstrates that the chemical etching of hexagonal boron nitride is possible in addition to the sputtering due to the ion bombardment in r.f. plasma environments. In order to study the occurrence of possible physical and chemical mechanisms, post-treatments of boron nitride coatings have been performed using respectively pure argon, Ar/H2 and Ar/Cl2 plasma mixtures. This study reveals the effects of ion bombardment, H/H2 atoms, and Cl/Cl2 on h-BN content in the films. It has been found that, in addition to ion bombardment, hydrogen atoms and more efficiently Cl and/or Cl2 can be considered as chemical etchant of sp2 bonded boron nitride.
SCHAFFNIT Catherine;
THOMAS Laurent;
ROSSI Francois;
1997-05-15
JRC17666
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