Please use this identifier to cite or link to this item:
|Title:||Etching of Boron Nitride in R.F. Plasmas.|
|Authors:||SCHAFFNIT Catherine; THOMAS Laurent; ROSSI Francois|
|Citation:||Journal of Vacuum Science and Technology vol. A15 no. 5 p. 2816|
|Type:||Articles in periodicals and books|
|Abstract:||This work demonstrates that the chemical etching of hexagonal boron nitride is possible in addition to the sputtering due to the ion bombardment in r.f. plasma environments. In order to study the occurrence of possible physical and chemical mechanisms, post-treatments of boron nitride coatings have been performed using respectively pure argon, Ar/H2 and Ar/Cl2 plasma mixtures. This study reveals the effects of ion bombardment, H/H2 atoms, and Cl/Cl2 on h-BN content in the films. It has been found that, in addition to ion bombardment, hydrogen atoms and more efficiently Cl and/or Cl2 can be considered as chemical etchant of sp2 bonded boron nitride.|
|JRC Directorate:||Institute for Health and Consumer Protection Historical Collection|
Files in This Item:
There are no files associated with this item.
Items in repository are protected by copyright, with all rights reserved, unless otherwise indicated.