Title: Hydrogen in Undoped and Heavily in situ Phosphorus Doped Silicon Films Deposited Using Disilane and Phosphine.
Authors: PEJNEFORS J.ZHANG S.l.GRAHN J.v.OSTLING M.PERSSON LeifHULT Mikael
Citation: Journal of Applied Physics vol. 86 p. 1970-1973
Publication Year: 1999
JRC N°: JRC19051
URI: http://publications.jrc.ec.europa.eu/repository/handle/JRC19051
Type: Articles in periodicals and books
Abstract: Abstract not available
JRC Directorate:Health, Consumers and Reference Materials

Files in This Item:
There are no files associated with this item.


Items in repository are protected by copyright, with all rights reserved, unless otherwise indicated.