Please use this identifier to cite or link to this item: http://publications.jrc.ec.europa.eu/repository/handle/JRC19051
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dc.contributor.authorPEJNEFORS J.en_GB
dc.contributor.authorZHANG S.l.en_GB
dc.contributor.authorGRAHN J.v.en_GB
dc.contributor.authorOSTLING M.en_GB
dc.contributor.authorPERSSON Leifen_GB
dc.contributor.authorHULT Mikaelen_GB
dc.date.accessioned2010-02-25T15:10:49Z-
dc.date.available1999-10-07en_GB
dc.date.available2010-02-25T15:10:49Z-
dc.date.issued1999en_GB
dc.date.submitted1999-09-14en_GB
dc.identifier.citationJournal of Applied Physics vol. 86 p. 1970-1973en_GB
dc.identifier.urihttp://publications.jrc.ec.europa.eu/repository/handle/JRC19051-
dc.description.abstractAbstract not availableen_GB
dc.description.sponsorshipJRC.D-Institute for Reference Materials and Measurements (Geel)en_GB
dc.format.mediumPrinteden_GB
dc.languageENGen_GB
dc.relation.ispartofseriesJRC19051en_GB
dc.titleHydrogen in Undoped and Heavily in situ Phosphorus Doped Silicon Films Deposited Using Disilane and Phosphine.en_GB
dc.typeArticles in periodicals and booksen_GB
JRC Directorate:Health, Consumers and Reference Materials

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