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dc.contributor.authorELOIRDI Rachelen_GB
dc.contributor.authorHAVELA L.en_GB
dc.contributor.authorGOUDER Thomasen_GB
dc.contributor.authorSHICK A. B.en_GB
dc.contributor.authorREBIZANT J.en_GB
dc.contributor.authorHUBER Franken_GB
dc.contributor.authorCACIUFFO Robertoen_GB
dc.date.accessioned2010-02-25T14:44:01Z-
dc.date.available2009-03-04en_GB
dc.date.available2010-02-25T14:44:01Z-
dc.date.created2009-03-04en_GB
dc.date.issued2009en_GB
dc.date.submitted2009-03-04en_GB
dc.identifier.citationJOURNAL OF NUCLEAR MATERIALS vol. 385 p. 8-10en_GB
dc.identifier.issn0022-3115en_GB
dc.identifier.urihttp://www.elsevier.com/locate/jnucmaten_GB
dc.identifier.urihttp://publications.jrc.ec.europa.eu/repository/handle/JRC50735-
dc.description.abstractThin layers of PuCoGax (x = 4 to 18) have been prepared by dc sputtering from a PuCoGa5 single crystal target, and investigated in situ by X-ray and ultraviolet photoelectron spectroscopy. We could achieve broad composition variability (monitored by the Pu-4f, Co-2p and Ga-2p core-level spectra). The results are compared to the valence band spectra reported previously for PuCoGa5. Our experiments reveal that some Ga excess (PuCoGa7) was likely for those original data. We demonstrate that there is a tendency to the segregation of Ga at the surface, which has an important effect on the valence band spectra.en_GB
dc.description.sponsorshipJRC.E.6-Actinides researchen_GB
dc.format.mediumPrinteden_GB
dc.languageENGen_GB
dc.publisherELSEVIER SCIENCE BVen_GB
dc.relation.ispartofseriesJRC50735en_GB
dc.titlePhotoelectron Spectroscopy Study of PuCoGa5 Thin Filmsen_GB
dc.typeArticles in periodicals and booksen_GB
dc.identifier.doi10.1016/j.jnucmat.2008.08.059en_GB
JRC Directorate:Nuclear Safety and Security

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