The chemical composition of the material at the annihilation sites (silicon atoms of the pore ¿wall¿), the size of nanodefects, and their concentration in porous silicon and single-crystal silicon wafers irradiated by protons have been determined using the angular distribution of annihilation photons.
BURCL Rudolf;
GRAFUTIN V.;
ILUYKHINA O.;
MYASYSHCHEVA G.;
PROKOPYEV E.;
TIMOSHENKOV S.;
FUNTIKOV Yu.;
2010-05-20
MAIK NAUKA/INTERPERIODICA/SPRINGER
JRC56997
1063-7834,
http://www.springerlink.com/content/d84uj02355261442/,
https://publications.jrc.ec.europa.eu/repository/handle/JRC56997,
10.1134/S1063783410040050,
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