Title: Possibilities of Studying Nanoobjects in Porous Silicon and Silicon Substrates Irradiated with Protons by Positron Annihilation Spectroscopy
Authors: BURCL RudolfGRAFUTIN V.ILUYKHINA O.MYASYSHCHEVA G.PROKOPYEV E.TIMOSHENKOV S.FUNTIKOV Yu.
Citation: PHYSICS OF THE SOLID STATE vol. 52 no. 4 p. 700-705
Publisher: MAIK NAUKA/INTERPERIODICA/SPRINGER
Publication Year: 2010
JRC N°: JRC56997
ISSN: 1063-7834
URI: http://www.springerlink.com/content/d84uj02355261442/
http://publications.jrc.ec.europa.eu/repository/handle/JRC56997
DOI: 10.1134/S1063783410040050
Type: Articles in periodicals and books
Abstract: The chemical composition of the material at the annihilation sites (silicon atoms of the pore ¿wall¿), the size of nanodefects, and their concentration in porous silicon and single-crystal silicon wafers irradiated by protons have been determined using the angular distribution of annihilation photons.
JRC Directorate:Energy, Transport and Climate

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