The Deposition of Amorphous Silicon Films by the Technique of Magnetron Sputtering

THIS REPORT DESCRIBES THE DEPOSITION PROCESS OF HYDROGENATED AMORPHOUS SILICON FILMS IN A COMMERCIALLY AVAILABLE ONE-CHAMBER MAGNETRON SUPTTER SYSTEM. THE SPUTTER CONDITIONS WERE INVESTIGATED BY VARIATION OF THE HYDROGEEN AND ARGON PARTIAL PRESSURE, SPUTTER POWER, AND SPUTTER TEMPERATURE. THE FILMS WERE CHARACTERIZED BY THE OPTICAL BAND GAP ENERGY AND THE DARK AND PHOTO CONDUCTIVITY. IN SPITE OF A SCARCE REPRODUCIBILITY FILMS OF NEARLY GLOW DISCHARGE QUALITY COULD BE PRODUCED. A NEW DOPING METHOD BY SPUTTERING FROM A HIGHLY DOPED SINGLE CRYSTAL WAFER, WHICH WAS USED AS SPUTTER TARGET, IS DESCRIBED. PROMISING BUT STILL PRELIMINARY EXPERIMENTAL RESULTS ARE REPORTED.

GISSLER Wolfram;  HAUPT Justus;  HOFFMANN Armin;  ARENZ H.;  SCHUBERT Rainer; 

1995-03-15

European Commission

JRC5805

EUR 11613 EN,   

https://publications.jrc.ec.europa.eu/repository/handle/JRC5805,