Characterization of U-based Thin Films - the UFe2+x Case

Please use this identifier to cite or link to this item: http://publications.jrc.ec.europa.eu/repository/handle/JRC68742

Title:	Characterization of U-based Thin Films - the UFe2+x Case
Authors:	KIM-NGAN Nhu-T H; HAVELA L; ADAMSKA A. M.; DANIS S.; PESICKA J; MACL J; ELOIRDI Rachel; HUBER Frank; GOUDER Thomas; BALOGH A.g.
Citation:	Journal of Physics - Conference Series vol. 303 p. 012012 (1-8)
Publisher:	Institute of Physics (IOP) and IOP Publishing 2010
Publication Year:	2011
JRC N°:	JRC68742
ISSN:	1742-6588
URI:	http://iopscience.iop.org/1742-6596/303/1/012012 http://publications.jrc.ec.europa.eu/repository/handle/JRC68742
DOI:	10.1088/1742-6596/303/1/012012
Type:	Articles in periodicals and books
Abstract:	We have characterized UFe2+x films prepared by sputter deposition onto fused silica (SiO2) and Si(111) substrates with the film thickness ranging from 75 nm to 900 nm. The X-ray diffraction results showed an amorphous character of the deposited material. Some of the films showed in addition a pattern of highly textured cubic Laves phase. Rutherford Backscattering Spectroscopy with 2 MeV He+ ions has been used to determine the composition, thickness and concentration depth profile of the films. A large ageing affect was observed within 1 month after that the films were exposed to air. Magnetic measurements revealed TC increasing with relative Fe concentration and reaching approx. 450 K in UFe3.0.
JRC Directorate:	Nuclear Safety and Security

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