Please use this identifier to cite or link to this item:
|Title:||The effect of shunt resistance on External Quantum Efficiency measurements at high light bias conditions|
|Authors:||PARASKEVA Vasiliki; MARIA Hadjipanayi; NORTON MATTHEW; PRAVETTONI Mauro; GEORGHIOU George|
|Citation:||IEEE 40th Photovoltaic Specialist Conference (PVSC) p. 3664 - 3669|
|Publisher:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Type:||Articles in periodicals and books|
|Abstract:||Series connection of multi-junction devices can lead to opto-electronic interactions between junctions and thus coupling effects. These effects can be important during External Quantum Efficiency (EQE) measurements of multi-junction devices. In an attempt to find the impact of coupling effects on different shunt resistance devices, EQE measurements have been carried out at high intensity light bias conditions. These measurements showed that in those conditions, the coupling current in high quality materials is considerably higher compared to low quality ones and lead to a larger reduction of the EQE signal. The difference in EQE is, nevertheless, small and it is apparent in all the response region of the material.|
|JRC Directorate:||Energy, Transport and Climate|
Files in This Item:
There are no files associated with this item.
Items in repository are protected by copyright, with all rights reserved, unless otherwise indicated.